2SC5729 transistor 1/3 medium power transistor (30v, 0.5a) 2SC5729 ! ! ! ! features 1) high speed switching. (tf : typ. : 50ns at i c = 500ma) 2) low saturation voltage, typically (typ. : 150mv at i c = 100ma, i b = 10ma) 3) strong discharge power for inductive load and capacitance load. 4) complements the 2sa2047 ! applications ! ! ! ! external dimensions (units : mm) each lead has same dimensions abbreviated symbol : uw umt3 1.25 2.1 0.3 0.15 0.1min. ( 3 ) 0.9 0.7 0.2 0.65 ( 2 ) 2.0 1.3 ( 1 ) 0.65 (1) emitter (2) base (3) collector small signal low frequency amplifier high speed switching ! ! ! ! structure npn silicon epitaxial planar transistor ! ! ! ! packaging specifications taping 2SC5729 type t106 3000 package basic ordering unit (pieces) code ! ! ! ! absolute maximum ratings (ta=25 c) parameter v v v a mw ? 1 pw = 10ms ? 2 each terminal mounted on a recommended land. ? 2 ? 1 c a c v cbo v ceo i c p c tj v ebo i cp tstg symbol 30 30 6 0.5 1.0 200 150 ? 55~ + 150 limits unit collector-base voltage collector-emitter voltage emitter-base voltage collector current power dissipation junction temperrature range of storage temperature
2SC5729 transistor 2/3 ! ! ! ! electrical characteristics (ta=25 c) parameter symbol bv ceo bv cbo bv ebo i cbo i ebo v ce(sat) ft h fe c ob t on min. 30 30 6 ? ? ? 120 ? ? ? ? ? ? ? 300 ?? 5 40 ? ? ? 1.0 1.0 ? 150 300 390 ? ? ? v i c = 100 a i c = 1ma i e = 100 a v ce = 2v, i c = 50ma v cb = 20v v eb = 4v i c = 100ma, i b = 100ma i c = 500ma i b1 = 50ma i b2 = ? 50ma v cc ~ 25v v ce = 10v, i e = ? 100ma, f = 1mhz v cb = 10v, i e = 0a, f = 1mhz v v a a mhz mv pf ns t stg ? 120 ? ns tf ? 50 ? ns typ. max. unit conditions collector ? base breakdown voltage collector cut-off current dc current gain transition frequency collector output capacitance turn-on time storage time fall time emitter cut-off current collector ? emitter staturation voltage collector ? emitter breakdown voltage emitter ? base breakdown voltage ! ! ! ! h fe rank qr 120-270 180-390 ! ! ! ! electrical characteristic curves fig.1 safe operating area collector emitter voltage : v ce (v) collector current : i c (a) single non repoetitive pulse dc 1ms 10ms 110 0.1 100 10 1 0.1 0.01 0.001 100ms fig.2 switching time 0.1 0.01 1 1000 100 10 collector current : i c (a) switching time (ns) ta = 25 c v cc = 25v i c /i b = 10/1 tstg tf ton fig.3 dc current gain vs. collector current collector current : i c (a) dc current gain : h fe 0.001 0.01 0.1 1 10 100 1000 ta = 125 c ta = 25 c ta =? 40 c v ce = 2v 0.001 0.01 0.1 1 10 100 1000 collector current : i c (a) dc current gain : h fe v ce = 5v v ce = 3v v ce = 2v fig.4 dc current gain vs. collector current 0.001 0.01 0.1 0.01 0.1 1 10 collector saturation voltage : v ce (sat ) collector current : i c (a) 1 fig.5 collector-emitter saturation voltage vs. collector current i c /i b = 10/1 ta = 125 c ta = 25 c ta =? 40 c 0.001 0.1 0.01 1 0.01 0.1 1 10 collector current : i c ( a) collector saturation voltage : v ce ( sat) fig.6 collector-emitter saturation voltage vs. collector current i c /i b = 100/1 i c /i b = 10/1 i c /i b = 20/1 ta = 25 c
2SC5729 transistor 3/3 collector current : i c (a) base emitter saturation voltage : v be (sat ) fig.7 base-emitter saturation voltage vs. collector current 0.001 0.01 0.1 1 10 100 1000 ta = 125 c i c /i b = 10/1 ta = 25 c ta =? 40 c 0.01 0.1 1 collector current : i c (a) base to emitter voltage : v be (v) 0 0.5 1 1.5 2 fig.8 ground emitter propagation characteristics v ce = 2v ta = 125 c ta = 25 c ta =? 40 c 1000 transition frequency : f t (mhz) emitter current : i e (a ) ? 1 ? 0.1 ? 0.01 ? 0.001 100 10 fig.9 transition frequency ta = 25 c v ce = 10v 100 collector output capacitance : c ob ( pf) collector to base voltage : v cb ( v) 100 10 1 0.1 10 1 fig.10 collector output capacitance ta = 25 c f = 1mhz ! ! ! ! switching characteristics measurement circuits collector current waveform base current waveform i b1 i b1 90% 10% i b2 i b2 i c v in p w i c r l =50 ? v cc 25v p w 50 s duty cycle 1% ton tstg tf
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